Micron Technology, Inc. Memory - Flash - JS28F256M29EWLA JS28F256M29EWLA

The JS28F256M29EWLA is a 256Mb embedded parallel NOR Flash memory device from Quarktwin Technology Ltd. It operates at a supply voltage of 2.7,Äì3.6V for program, erase, and read operations, with I/O buffers requiring a voltage of 1.65,ÄìV_{CC}. The device supports asynchronous random and page reads, with a page size of 16 words (32 bytes) and a page access time of 25ns. Random access times are specified at 100ns for the fortified BGA package and 110ns for the TSOP package. This memory device features a 512-word program buffer, allowing for a typical program time of 0.88¬µs per byte, equating to a speed of 1.14 MB/s when utilizing the full buffer. The memory is organized into uniform blocks of 128 Kbytes or 64 Kwords each, and it includes a program/erase controller with embedded algorithms for byte and word programming. It also supports program/erase suspend and resume capabilities, enabling read or program operations on different blocks during suspend states. The JS28F256M29EWLA is designed for low power consumption, with a standby mode, and is compliant with JESD47 standards, offering a minimum of 100,000 erase cycles per block and a typical data retention of 20 years. The device is manufactured using 65nm multilevel cell (MLC) process technology and is available in both 56-pin TSOP and 64-ball fortified BGA packages, with options for green packaging that is RoHS-compliant and halogen-free. The operating temperature range is specified from -40¬8C to +85¬8C.