Microchip Technology, Inc. MOSFET VP3203N3-G P003

The VP3203N3-G is a P-channel enhancement-mode vertical DMOS FET in a TO-92 package, designed for switching and amplification in motor controls, converters, and power supply circuits. It has a drain-to-source breakdown voltage of -30 V, a maximum continuous drain current of -650 mA, and a static drain-to-source on-state resistance of up to 1.0 Ω at V_GS = -4.5 V and I_D = -1.5 A. The device features an integral source-to-drain diode, low input capacitance, and operates over a temperature range of -55°C to +150°C. It is RoHS compliant and includes an integrated diode for reverse current protection.