The VP3203 is a P-channel enhancement-mode vertical DMOS FET designed for switching and amplifying applications requiring low threshold voltage, high input impedance, and fast switching. It is available in a 3-lead TO-92 or TO-243AA (SOT-89) package, with a maximum drain-to-source voltage of -30V and a continuous drain current of -650mA in TO-92 or -1100mA in SOT-89. The device has a maximum on-state resistance of 0.6Ω at -10V gate-source voltage and -3A drain current, and operates over a junction temperature range of -55°C to +150°C. Thermal resistance is 132°C/W for TO-92 and 133°C/W for SOT-89. The part is RoHS compliant and includes an integral source-to-drain diode.
This low threshold, enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. Vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.
Additional Features
| Microchip Technology, Inc. | |
|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | VP3203 |
| Product Name | -30V P-Channel Enhancement-Mode MOSFET |
| Polarity | P-Channel |
