Microchip Technology, Inc. MOSFET VP2450N3-G P013

Description
MOSFET N-CH Enhancmnt Mode MOSFET
Description
MOSFET N-CH Enhancmnt Mode MOSFET
Datasheet
Datasheet Summary
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The VP2450 series is a P-channel enhancement-mode vertical DMOS FET designed for switching and amplification applications such as motor controls, converters, and power supplies. It is available in TO-92 (N3) and TO-243AA (SOT-89) packages, with the VP2450N3-G variant housed in the TO-92 package. The device has a drain-to-source breakdown voltage of -500 V, a static drain-to-source on-state resistance of up to 35 Ω at -4.5 V gate bias, and a continuous drain current of -100 mA in the TO-92 package. It features a gate threshold voltage range of -1.5 V to -3.5 V, low input capacitance of up to 190 pF, and operates from -55°C to +150°C. The part is RoHS compliant and includes an integral source-to-drain diode.

Datasheet Summary
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The VP2450 series is a P-channel enhancement-mode vertical DMOS FET designed for switching and amplification applications such as motor controls, converters, and power supplies. It is available in TO-92 (N3) and TO-243AA (SOT-89) packages, with the VP2450N3-G variant housed in the TO-92 package. The device has a drain-to-source breakdown voltage of -500 V, a static drain-to-source on-state resistance of up to 35 Ω at -4.5 V gate bias, and a continuous drain current of -100 mA in the TO-92 package. It features a gate threshold voltage range of -1.5 V to -3.5 V, low input capacitance of up to 190 pF, and operates from -55°C to +150°C. The part is RoHS compliant and includes an integral source-to-drain diode.

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MOSFET N-CH Enhancmnt Mode MOSFET

MOSFET N-CH Enhancmnt Mode MOSFET

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Technical Specifications

  VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET)
Product Number VP2450N3-G P013
Product Name MOSFET
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