Microchip Technology, Inc. MOSFET VP2206N3-G P014

The VP2206N3-G is a P-channel enhancement-mode vertical DMOS FET in a TO-92 package, designed for switching and amplifying applications requiring low threshold voltage and high input impedance. It has a drain-to-source breakdown voltage of -60 V and a maximum on-state drain current of -4.0 A at -10 V gate-to-source voltage. The device features a static drain-to-source on-state resistance of up to 0.9 Ω at -10 V gate-to-source voltage and -3.5 A drain current, with a maximum gate-to-source voltage of ±20 V. Operating and storage temperatures range from -55°C to +150°C. The TO-92 package has a power dissipation of 1.0 W at 25°C case temperature and is RoHS compliant.