Microchip Technology, Inc. MOSFET VP2206N3-G P005

The VP2206N3-G is a P-channel enhancement-mode vertical DMOS FET in a TO-92 package, designed for switching and amplifying applications requiring low threshold voltage, high input impedance, and fast switching speeds. It has a drain-to-source breakdown voltage of -60 V, a maximum continuous drain current of -0.64 A, and a static drain-to-source on-state resistance of 0.75 Ω to 0.9 Ω at -10 V gate-source voltage. The device features an integral source-to-drain diode, operates from -55°C to +150°C, and is RoHS compliant. Its high input impedance and positive temperature coefficient enable easy paralleling and thermal stability. The part includes an integral source-to-drain diode with a forward voltage drop of -1.1 V to -1.6 V at -3.5 A.