The VP2206 series consists of P-channel enhancement-mode vertical DMOS FETs designed for switching and amplifying applications requiring high breakdown voltage, low input capacitance, and fast switching speeds. The devices feature an integral source-to-drain diode, high input impedance, and thermal stability, with no thermal runaway or secondary breakdown. Available in TO-39 and TO-92 packages, they have a maximum drain-to-source voltage of -60V, a continuous drain current of -640mA for TO-92 and -750mA for TO-39, and a static drain-to-source on-state resistance of up to 0.9Ω at -10V gate-source voltage. The TO-92 package has a thermal resistance of 132°C/W. All variants are RoHS compliant and operate from -55°C to +150°C.
VP2206 is an enhancement-mode (normally-off) transistor that utilizes a vertical DMOS structure and well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors, and the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. Vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.
Additional Features
| Microchip Technology, Inc. | |
|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | VP2206 |
| Product Name | -60V P-Channel Enhancement-Mode MOSFET |
| Polarity | P-Channel |
