The VP2110 is a P-channel enhancement-mode vertical DMOS FET designed for switching and amplifying applications requiring high breakdown voltage, low input capacitance, and fast switching speeds. It is packaged in a TO-236AB (SOT-23) case with a 2.90mm x 1.30mm body and maximum height of 1.12mm. The device has a drain-to-source breakdown voltage of -100V, a static drain-to-source on-state resistance of up to 12Ω at -10V gate voltage, and a continuous drain current of -120mA. It features an integral source-to-drain diode, a gate-to-source voltage rating of ±20V, and operates from -55°C to +150°C. The package is lead-free and RoHS compliant. Thermal resistance is 203°C/W. The part meets AEC-Q200 and RoHS standards.
VP2110 is an enhancement-mode (normally-off) transistor that utilizes a vertical DMOS structure and well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors, and the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. Vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.
Additional Features
| Microchip Technology, Inc. | |
|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | VP2110 |
| Product Name | -100V P-Channel Enhancement-Mode MOSFET |
| Polarity | P-Channel |
