The VP2106 is a P-channel enhancement-mode vertical DMOS FET designed for switching and amplifying applications requiring low threshold voltage, high input impedance, and fast switching speeds. It comes in a TO-92 package with dimensions of 0.170 to 0.210 inches in height, 0.175 to 0.205 inches in width, and 0.500 to 0.610 inches in lead length. The device has a drain-to-source breakdown voltage of -60 V, a continuous drain current of -250 mA, and a pulsed drain current of -800 mA. It features a static drain-to-source on-state resistance of 9.0 to 12 ohms at -10 V gate-source voltage and -500 mA drain current, a gate threshold voltage range of -1.5 to -3.5 V, and an integral source-drain diode. Thermal resistance is 132 °C/W, and operating temperature ranges from -55 °C to +150 °C.
This enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. Vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.
Additional Features
| Microchip Technology, Inc. | |
|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | VP2106 |
| Product Name | -60V P-Channel Enhancement-Mode MOSFET |
| Polarity | P-Channel |
