Microchip Technology, Inc. MOSFET VP0808L-G P014

The VP0808L-G is a P-channel enhancement-mode vertical DMOS FET in a TO-92 package, designed for switching and amplifying applications such as motor controls, power supplies, and drivers. It has a drain-to-source breakdown voltage of -80 V, a maximum on-state drain current of -1.1 A, and a static drain-to-source on-state resistance of 5.0 Ω at -10 V gate-source voltage. The device features an integral source-to-drain diode, low input capacitance, and fast switching speeds. It is RoHS compliant and operates over a temperature range of -55°C to +150°C.