The VP0808 is a P-channel enhancement-mode vertical DMOS FET designed for switching and amplifying applications requiring high input impedance, fast switching, and thermal stability. It is packaged in a TO-92 case with dimensions of 0.210 inches in height, 0.205 inches in width, and 0.165 inches in lead spacing. The device has a drain-to-source breakdown voltage of -80 V, a maximum continuous drain current of -280 mA, and a static drain-to-source on-state resistance of 5.0 Ω at -10 V gate-source voltage. It features an integral source-drain diode with a forward voltage drop of -1.2 V and a gate threshold voltage range of -1.0 V to -4.5 V. The part is RoHS compliant and operates from -55°C to +150°C. Thermal resistance is 132 °C/W.
This enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. Vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.
Additional Features
| Microchip Technology, Inc. | |
|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | VP0808 |
| Product Name | -80V P-Channel Enhancement-Mode MOSFET |
| Polarity | P-Channel |
