The VP0109 is a P-channel enhancement-mode vertical DMOS FET in a TO-92 package, designed for switching and amplifying applications requiring low threshold voltage, high input impedance, and fast switching speeds. It has a drain-to-source breakdown voltage of -90 V, a maximum continuous drain current of -250 mA, and an on-state resistance of up to 8.0 Ω at -10 V gate-source voltage. The device features an integral source-drain diode, thermal stability, and a positive temperature coefficient. It operates from -55°C to +150°C and is RoHS compliant. The TO-92 package has dimensions up to 0.210 inches in length and 0.165 inches in width.
This enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. Vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.
Additional Features
| Microchip Technology, Inc. | |
|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | VP0109 |
| Product Name | -90V P-Channel Enhancement-Mode MOSFET |
| Polarity | P-Channel |
