The VP0106 is a -60V P-channel enhancement-mode vertical DMOS FET in a TO-92 package, designed for switching and amplification applications requiring low threshold voltage, high input impedance, and fast switching speeds. It has a maximum drain-to-source voltage of -60V, a continuous drain current of -250mA, and an on-state resistance of 8.0Ω at -10V gate-source voltage and -500mA drain current. The device features an integral source-drain diode, thermal stability, and a positive temperature coefficient. It operates from -55°C to +150°C, has a thermal resistance of 132°C/W, and is RoHS compliant. The package is a 3-lead TO-92 with dimensions conforming to JEDEC standards.
This enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. Vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.
Additional Features
| Microchip Technology, Inc. | |
|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | VP0106 |
| Product Name | -60V P-Channel Enhancement-Mode MOSFET |
| Polarity | P-Channel |
