Microchip Technology, Inc. MOSFET VP0104N3-G P014

The VP0104N3-G is a P-channel enhancement-mode vertical DMOS FET in a TO-92 package, designed for switching and amplifying applications requiring low threshold voltage, high input impedance, and fast switching. It has a drain-to-source breakdown voltage of -40 V, a maximum continuous drain current of -250 mA, and an on-state resistance of 6.0 to 8.0 Ω at -10 V gate drive. The device features an integral source-to-drain diode, a gate threshold voltage range of -1.5 to -3.5 V, and operates over a temperature range of -55°C to +150°C. The -G suffix indicates RoHS compliance. The part uses a 3-lead TO-92 package with dimensions of 0.175 to 0.205 inches in length, 0.125 to 0.165 inches in width, and 0.080 to 0.105 inches in lead spacing. Thermal resistance is 125°C/W from junction to case and 170°C/W from junction to ambient.