Microchip Technology, Inc. MOSFET VP0104N3-G P003

The VP0104N3-G is a P-channel enhancement-mode vertical DMOS FET in a TO-92 package, designed for switching and amplification applications requiring low threshold voltage, high input impedance, and fast switching speeds. It has a drain-to-source breakdown voltage of -40 V, a maximum continuous drain current of -250 mA, and an on-state resistance of 6.0 to 8.0 Ω at -10 V gate-source voltage and -500 mA drain current. The device features an integral source-to-drain diode with a forward voltage drop of -1.2 to -2.0 V and reverse recovery time up to 400 ns. It operates over a temperature range of -55°C to +150°C and is RoHS compliant. The TO-92 package dimensions are 5.21 mm by 3.81 mm, with a lead spacing of 2.54 mm.