Microchip Technology, Inc. MOSFET VN4012L-G P014

Description
MOSFET N-CH Enhancmnt Mode MOSFET
Description
MOSFET N-CH Enhancmnt Mode MOSFET
Datasheet
Datasheet Summary
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N-channel enhancement-mode vertical DMOS FET in a TO-92 package with a 400 V drain-to-source breakdown voltage, a gate threshold voltage range of 0.6 to 1.8 V, and a continuous drain current of 160 mA. The device features low power drive requirements, high input impedance, and an integral source-drain diode, with RoHS-compliant 'Green' packaging. It is designed for switching and amplifying applications such as motor controls, converters, and drivers.

Datasheet Summary
Powered by GS/AI

N-channel enhancement-mode vertical DMOS FET in a TO-92 package with a 400 V drain-to-source breakdown voltage, a gate threshold voltage range of 0.6 to 1.8 V, and a continuous drain current of 160 mA. The device features low power drive requirements, high input impedance, and an integral source-drain diode, with RoHS-compliant 'Green' packaging. It is designed for switching and amplifying applications such as motor controls, converters, and drivers.

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Sheung Wan, Hong Kong
MOSFET N-CH Enhancmnt Mode MOSFET

MOSFET N-CH Enhancmnt Mode MOSFET

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Technical Specifications

  VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET)
Product Number VN4012L-G P014
Product Name MOSFET
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