Microchip Technology, Inc. MOSFET VN4012L-G P005

Description
MOSFET N-CH Enhancmnt Mode MOSFET
Description
MOSFET N-CH Enhancmnt Mode MOSFET
Datasheet
Datasheet Summary
Powered by GS/AI

The VN4012L-G is an N-channel enhancement-mode vertical DMOS FET in a TO-92 package, designed for switching and amplifying applications requiring low threshold voltage, high input impedance, and fast switching speeds. It features a drain-to-source breakdown voltage of 400 V, a gate threshold voltage range of 0.6 to 1.8 V, and a continuous drain current of 160 mA. The device has a maximum on-state resistance of 30 Ω at 125°C and an input capacitance of 110 pF. It operates from -55°C to +150°C, is RoHS compliant, and includes an integral source-drain diode. The TO-92 package measures 17.5 to 20.5 mm in length and 12.5 to 16.5 mm in width.

Datasheet Summary
Powered by GS/AI

The VN4012L-G is an N-channel enhancement-mode vertical DMOS FET in a TO-92 package, designed for switching and amplifying applications requiring low threshold voltage, high input impedance, and fast switching speeds. It features a drain-to-source breakdown voltage of 400 V, a gate threshold voltage range of 0.6 to 1.8 V, and a continuous drain current of 160 mA. The device has a maximum on-state resistance of 30 Ω at 125°C and an input capacitance of 110 pF. It operates from -55°C to +150°C, is RoHS compliant, and includes an integral source-drain diode. The TO-92 package measures 17.5 to 20.5 mm in length and 12.5 to 16.5 mm in width.

Suppliers

Company
Product
Description
Supplier Links
Sheung Wan, Hong Kong
MOSFET N-CH Enhancmnt Mode MOSFET

MOSFET N-CH Enhancmnt Mode MOSFET

Buy Now Datasheet

Technical Specifications

  VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET)
Product Number VN4012L-G P005
Product Name MOSFET
Unlock Full Specs
to access all available technical data