Microchip Technology, Inc. MOSFET VN4012L-G P002

The VN4012L-G is an N-channel enhancement-mode vertical DMOS FET in a TO-92 package, designed for switching and amplifying applications requiring low threshold voltage, high input impedance, and fast switching speeds. It has a drain-to-source breakdown voltage of 400 V, a maximum on-state resistance of 12 Ω at 4.5 V gate voltage, and a gate threshold voltage ranging from 0.6 V to 1.8 V. The device features an integral source-drain diode, zero gate voltage drain current up to 100 µA at 125°C, and an input capacitance of 110 pF. It operates from -55°C to +150°C and meets RoHS compliance. Thermal resistance is 125 °C/W from junction to ambient. The part is marked with 'Si VN YYWW' indicating 'Green' packaging. Package dimensions conform to JEDEC TO-92 with a lead spacing of 0.095 to 0.105 inches.