Microchip Technology, Inc. MOSFET VN3515L-G

The VN3515L-G is an N-channel enhancement-mode vertical DMOS FET in a TO-92 package, designed for switching and amplifying applications requiring low threshold voltage and high input impedance. It has a drain-to-source breakdown voltage of 350 V, a static drain-to-source on-state resistance of up to 15 Ω at V_GS = 4.5 V and I_D = 100 mA, and a gate threshold voltage of 0.6 to 1.8 V. The device features an integral source-drain diode, operates from -55°C to +150°C, and is RoHS compliant. Physical dimensions conform to the TO-92 (L) package outline with a height of up to 0.610 inches.