Microchip Technology, Inc. MOSFET VN3515L-G P014

The VN3515L-G is an N-channel enhancement-mode vertical DMOS FET in a TO-92 package, designed for switching and amplifying applications requiring low threshold voltage, high input impedance, and fast switching speeds. It has a drain-to-source breakdown voltage of 350 V, a maximum continuous drain current of 150 mA, and an on-state resistance of up to 15 Ω at VGS = 4.5 V and ID = 100 mA. The gate threshold voltage ranges from 0.6 V to 1.8 V. The device is RoHS compliant and features an integrated source-drain diode. It operates over a temperature range of -55°C to +150°C and meets JEDEC TO-92 package standards.