Microchip Technology, Inc. MOSFET VN3205N3-G P014

Description
MOSFET N-CH Enhancmnt Mode MOSFET
Description
MOSFET N-CH Enhancmnt Mode MOSFET
Datasheet
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The VN3205N3-G P014 is an N-channel enhancement-mode vertical DMOS FET in a 3-lead TO-92 package, designed for switching and amplification applications requiring high voltage, low input capacitance, and fast switching. It has a drain-to-source breakdown voltage of 50 V, a maximum continuous drain current of 1.2 A, and an on-state resistance of up to 0.3 Ω at 10 V gate voltage and 3.0 A drain current. The device features an integral source-drain diode, a gate threshold voltage range of 0.8 to 2.4 V, and operates within a temperature range of -55°C to +150°C. It meets RoHS compliance standards and has a thermal resistance of 132°C/W.

Datasheet Summary
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The VN3205N3-G P014 is an N-channel enhancement-mode vertical DMOS FET in a 3-lead TO-92 package, designed for switching and amplification applications requiring high voltage, low input capacitance, and fast switching. It has a drain-to-source breakdown voltage of 50 V, a maximum continuous drain current of 1.2 A, and an on-state resistance of up to 0.3 Ω at 10 V gate voltage and 3.0 A drain current. The device features an integral source-drain diode, a gate threshold voltage range of 0.8 to 2.4 V, and operates within a temperature range of -55°C to +150°C. It meets RoHS compliance standards and has a thermal resistance of 132°C/W.

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MOSFET N-CH Enhancmnt Mode MOSFET

MOSFET N-CH Enhancmnt Mode MOSFET

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Technical Specifications

  VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET)
Product Number VN3205N3-G P014
Product Name MOSFET
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