The VN3205 is an N-channel enhancement-mode vertical DMOS FET designed for switching and amplifying applications requiring high breakdown voltage, low input capacitance, and fast switching speeds. It is available in 3-lead TO-92 and 3-lead SOT-89 packages, with a drain-to-source breakdown voltage of 50 V and a gate-to-source voltage rating of ±20 V. The device features an integral source-drain diode, a typical on-state resistance of 0.3 Ω at 10 V gate voltage and 3 A drain current, and a gate threshold voltage ranging from 0.8 V to 2.4 V. It operates over an ambient temperature range of -55°C to +150°C, with thermal resistance of 132 °C/W for TO-92 and 133 °C/W for SOT-89. The part is RoHS-compliant and Pb-free.
This enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally induced secondary breakdown. Vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.
Additional Features
| Microchip Technology, Inc. | |
|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | VN3205 |
| Product Name | 50V N-Channel Enhancement-Mode MOSFET |
| Polarity | N-Channel |
