Microchip Technology, Inc. Single FETs, MOSFETs VN2450N3-G

Description
N-Channel 500V 200mA (Tj) 1W (Ta) Through Hole TO-92-3
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Description
N-Channel 500V 200mA (Tj) 1W (Ta) Through Hole TO-92-3
Request a Quote Datasheet

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Product
Description
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Single FETs, MOSFETs - VN2450N3-G-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
VN2450N3-G-ND
Single FETs, MOSFETs VN2450N3-G-ND
N-Channel 500V 200mA (Tj) 1W (Ta) Through Hole TO-92-3

N-Channel 500V 200mA (Tj) 1W (Ta) Through Hole TO-92-3

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TRANSISTORS - Transistors - FETs, MOSFETs - RF - VN2450N3-G - 799123-VN2450N3-G - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - VN2450N3-G
799123-VN2450N3-G
TRANSISTORS - Transistors - FETs, MOSFETs - RF - VN2450N3-G 799123-VN2450N3-G
Manufacturer: Microchip Technology Win Source Part Number: 799123-VN2450N3-G Packaging: Bulk Mounting Style: Through Hole Operating Temperature Range: -55°C ~ 150°C (TJ) Package: TO-226-3, TO-92-3 (TO-226AA) Technology: MOSFET Current - Continuous Drain (Id) @ 25°C: 200mA (Tj) Family Name: VN2450N3 Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Manufacturer Package: TO-92-3 Channel Type Type: N Drain Source Voltage: 500V Vgs(th) (Maximum) @ Id: 4V @ 1mA Input Capacitance (Ciss) (Maximum) @ Vds: 150pF @ 25V Vgs (Maximum): ±20V Power Dissipation (Maximum): 1W (Ta) Rds On (Maximum) @ Id, Vgs: 13 Ohm @ 400mA, 10V Introduction Date: January 05, 2000 ECCN: EAR99 Country of Origin: Japan Estimated EOL Date: 2027 Halogen Free: Compliant Popularity: Medium Fake Threat In the Open Market: 31 pct. Supply and Demand Status: Limited

Manufacturer: Microchip Technology
Win Source Part Number: 799123-VN2450N3-G
Packaging: Bulk
Mounting Style: Through Hole
Operating Temperature Range: -55°C ~ 150°C (TJ)
Package: TO-226-3, TO-92-3 (TO-226AA)
Technology: MOSFET
Current - Continuous Drain (Id) @ 25°C: 200mA (Tj)
Family Name: VN2450N3
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Manufacturer Package: TO-92-3
Channel Type Type: N
Drain Source Voltage: 500V
Vgs(th) (Maximum) @ Id: 4V @ 1mA
Input Capacitance (Ciss) (Maximum) @ Vds: 150pF @ 25V
Vgs (Maximum): ±20V
Power Dissipation (Maximum): 1W (Ta)
Rds On (Maximum) @ Id, Vgs: 13 Ohm @ 400mA, 10V
Introduction Date: January 05, 2000
ECCN: EAR99
Country of Origin: Japan
Estimated EOL Date: 2027
Halogen Free: Compliant
Popularity: Medium
Fake Threat In the Open Market: 31 pct.
Supply and Demand Status: Limited

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Discrete Semiconductor Products - Transistors - FETs, MOSFETs - VN2450N3-G - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
VN2450N3-G
Discrete Semiconductor Products - Transistors - FETs, MOSFETs VN2450N3-G
MOSFET N-CH 500V 200MA TO92-3

MOSFET N-CH 500V 200MA TO92-3

Supplier's Site
Sheung Wan, Hong Kong
MOSFET 500V 13Ohm

MOSFET 500V 13Ohm

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Technical Specifications

  DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number VN2450N3-G-ND 799123-VN2450N3-G VN2450N3-G VN2450N3-G
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - VN2450N3-G Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET
Polarity N-Channel
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