The VN2410 is an N-channel enhancement-mode vertical DMOS FET suited for switching and amplification applications. It is packaged in a 3-lead TO-92 case and has a drain-to-source breakdown voltage of 240 V, a gate threshold voltage range of 0.8 to 2 V, and a static drain-to-source on-state resistance of up to 10 Ω at 10 V gate voltage. The device supports a continuous drain current of 1 A and features an integral source-drain diode with a forward voltage drop of 1.2 V. It operates over an ambient temperature range of -55°C to +150°C and has a thermal resistance of 132 °C/W. The transistor exhibits fast switching speeds, with a turn-on delay of 8 ns, rise time of 8 ns, turn-off delay of 23 ns, and fall time of 24 ns under specified conditions.
This enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. Vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.
Additional Features
| Microchip Technology, Inc. | |
|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | VN2410 |
| Product Name | 240V N-Channel Enhancement-Mode MOSFET |
| Polarity | N-Channel |
