Microchip Technology, Inc. MOSFET VN2406L-G P014

The VN2406L-G is an N-channel enhancement-mode vertical DMOS FET in a TO-92 package, designed for switching and amplification applications requiring high input impedance, low gate threshold voltage, and fast switching speeds. It has a drain-to-source breakdown voltage of 240 V, a static drain-to-source on-state resistance of up to 6.0 Ω at V_GS = 10 V and I_D = 500 mA, and an on-state drain current of 1.0 A. The device features an integral source-drain diode, low input capacitance (up to 125 pF), and a positive temperature coefficient of resistance. It is RoHS compliant and operates over a temperature range of -55°C to +150°C.