Microchip Technology, Inc. MOSFET VN2406L-G P013

The VN2406L-G is an N-channel enhancement-mode vertical DMOS FET in a TO-92 package, designed for switching and amplifying applications requiring high input impedance, low gate threshold voltage, and fast switching speeds. It has a drain-to-source breakdown voltage of 240 V, an on-state resistance of 6.0 Ω at 10 V gate voltage, and a continuous drain current of 1.0 A. The device features an integral source-drain diode, low input capacitance, and operates over a temperature range of -55°C to +150°C. It is RoHS compliant, as indicated by the -G suffix.