Microchip Technology, Inc. MOSFET VN2406L-G P005

Description
MOSFET N-CH Enhancmnt Mode MOSFET
Description
MOSFET N-CH Enhancmnt Mode MOSFET
Datasheet
Datasheet Summary
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N-channel enhancement-mode vertical DMOS FET in a TO-92 package, rated for 240 V drain-to-source voltage and 1.0 A continuous drain current, with a maximum on-state resistance of 6.0 Ω at 10 V gate bias and a threshold voltage range of 0.8 V to 2.0 V. The device features an integral source-drain diode, low input capacitance, and positive temperature coefficient for thermal stability. It is RoHS compliant and operates from -55°C to +150°C.

Datasheet Summary
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N-channel enhancement-mode vertical DMOS FET in a TO-92 package, rated for 240 V drain-to-source voltage and 1.0 A continuous drain current, with a maximum on-state resistance of 6.0 Ω at 10 V gate bias and a threshold voltage range of 0.8 V to 2.0 V. The device features an integral source-drain diode, low input capacitance, and positive temperature coefficient for thermal stability. It is RoHS compliant and operates from -55°C to +150°C.

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Sheung Wan, Hong Kong
MOSFET N-CH Enhancmnt Mode MOSFET

MOSFET N-CH Enhancmnt Mode MOSFET

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Technical Specifications

  VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET)
Product Number VN2406L-G P005
Product Name MOSFET
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