The VN2406 is an N-channel enhancement-mode vertical DMOS FET in a 3-lead TO-92 package, designed for switching and amplifying applications requiring high breakdown voltage, low input capacitance, and fast switching speeds. It has a drain-to-source breakdown voltage of 240 V, a static drain-to-source on-state resistance of up to 6 Ω at 10 V gate bias, and a continuous drain current of 1 A. The device features an integral source-drain diode, a gate threshold voltage range of 0.8 to 2 V, and operates with an ambient temperature range of -55°C to +150°C. Thermal resistance is 132 °C/W. It meets RoHS compliance and is Pb-free.
This enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. Vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.
Additional Features
| Microchip Technology, Inc. | |
|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | VN2406 |
| Product Name | 240V N-Channel Enhancement-Mode MOSFET |
| Polarity | N-Channel |
