The VN2222LL is an N-channel enhancement-mode vertical DMOS FET in a TO-92 package, designed for switching and amplification applications requiring low threshold voltage, high input impedance, and fast switching. It has a drain-to-source breakdown voltage of 60 V, a static drain-to-source on-state resistance of up to 7.5 Ω at V_GS = 10 V, and a continuous drain current rating of 230 mA. The device features an integral source-drain diode, thermal stability, and a positive temperature coefficient. It meets RoHS compliance and operates from -55°C to +150°C. The TO-92 package measures up to 0.210 inches in height, 0.205 inches in body width, and 0.165 inches in lead spacing.
This enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown.
Additional Features
| Microchip Technology, Inc. | |
|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | VN2222L |
| Product Name | 60V N-Channel Enhancement-Mode MOSFET |
| Polarity | N-Channel |
