VN2210 is an N-channel enhancement-mode vertical DMOS FET designed for switching and amplifying applications requiring high breakdown voltage, high input impedance, and fast switching speeds. It is available in TO-39 and TO-92 packages, with a drain-to-source breakdown voltage of 100 V, a gate-source threshold voltage ranging from 0.8 V to 2.4 V, and a static drain-to-source on-state resistance of 0.27 Ω to 0.5 Ω depending on gate voltage. The device includes an integral source-drain diode with a forward voltage drop of 1 to 1.6 V and features excellent thermal stability, free from thermal runaway and secondary breakdown. Operating and storage temperatures range from -55°C to +150°C.
VN2210 is an enhancement-mode (normally-off) transistor that utilizes a vertical DMOS structure and well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors, and the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. Vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.
Additional Features
| Microchip Technology, Inc. | |
|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | VN2210 |
| Product Name | 100V N-Channel Enhancement-Mode MOSFET |
| Polarity | N-Channel |
