Microchip Technology, Inc. MOSFET VN1206L-G P005

The VN1206L-G is an N-channel enhancement-mode vertical DMOS FET in a TO-92 package, designed for switching and amplifying applications requiring low threshold voltage, high input impedance, and fast switching speeds. It has a drain-to-source breakdown voltage of 120 V, a maximum on-state drain current of 1.0 A, and a static drain-to-source on-state resistance of up to 6.0 Ω at VGS = 10 V and ID = 500 mA. The device features an integral source-drain diode, a gate-to-source voltage rating of ±30 V, and operates within a temperature range of -55°C to +150°C. It is RoHS compliant and supplied in a sealed, green packaging variant. Thermal resistance is 230°C/W for continuous operation, with a power dissipation limit of 2.0 W at 25°C ambient temperature.