The VN1206 is a 120V N-Channel Enhancement-Mode MOSFET designed for various applications including motor controls, converters, amplifiers, and power supply circuits. It features a low on-state resistance of 6.0Oc and a maximum continuous drain current of 230mA, with a pulsed current capability of up to 2.0A. The device operates with a gate-to-source voltage of ¬±30V and has a breakdown voltage of 120V. It is characterized by low input capacitance (CISS of 125pF) and fast switching speeds, making it suitable for high-frequency applications. The VN1206 is packaged in a TO-92 form factor and is RoHS compliant. Its thermal resistance is rated at 132¬8C/W, ensuring good thermal stability during operation. This MOSFET is free from thermal runaway and secondary breakdown, enhancing its reliability in various electronic circuits.
This enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. Vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.
Additional Features
| Microchip Technology, Inc. | |
|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | VN1206 |
| Product Name | 120V N-Channel Enhancement-Mode MOSFET |
| Polarity | N-Channel |
