The VN0808L-G is an N-channel enhancement-mode vertical DMOS FET in a TO-92 package, designed for switching and amplifying applications requiring high input impedance, low gate threshold voltage, and fast switching. It has a drain-to-source breakdown voltage of 80 V, an on-state drain current of 1.5 A, and a maximum on-state resistance of 4.0 Ω at V_GS = 10 V. The device features an integral source-drain diode, low input capacitance of 50 pF, and operates from -55°C to +150°C. It is RoHS compliant and meets JEDEC TO-92 package standards.
MOSFET N-CH Enhancmnt Mode MOSFET
| VAST STOCK CO., LIMITED | |
|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | VN0808L-G P005 |
| Product Name | MOSFET |
