The VN0808 is an N-channel enhancement-mode vertical DMOS FET designed for switching and amplification applications requiring low threshold voltage, high breakdown voltage, and fast switching speeds. It is packaged in a TO-92 case with dimensions of 0.210 inches maximum height, 0.205 inches maximum body width, and 0.610 inches maximum lead length. The device has a drain-to-source breakdown voltage of 80V, a static on-state resistance of 4.0Ω maximum, and a continuous drain current of 300mA at 25°C. It features an integral source-drain diode with a forward voltage drop of 0.85V typical, high input impedance, and thermal stability. The part is RoHS compliant and operates over a temperature range of -55°C to +150°C.
This enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.
Additional Features
| Microchip Technology, Inc. | |
|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | VN0808 |
| Product Name | 80V N-Channel Enhancement-Mode MOSFET |
| Polarity | N-Channel |
