Microchip Technology, Inc. MOSFET VN0606L-G P002

The VN0606L-G is an N-channel enhancement-mode vertical DMOS FET in a TO-92 package, designed for switching and amplifying applications requiring low threshold voltage, high input impedance, and fast switching speeds. It has a drain-to-source breakdown voltage of 60 V, a continuous drain current of 1.5 A, and a static on-state resistance of up to 3.0 Ω at 10 V gate-source voltage. The device features an integral source-drain diode, high input capacitance of up to 50 pF, and operates from -55°C to +150°C. It is RoHS compliant and includes an integrated diode. The part is housed in a TO-92 (L) package with dimensions specified as 5.18 mm × 3.94 mm × 3.94 mm. Thermal resistance is 125°C/W junction-to-ambient. The device meets no specified industry standards beyond its electrical and thermal ratings.