Microchip Technology, Inc. MOSFET VN0550N3-G P002

The VN0550 is an N-channel enhancement-mode vertical DMOS FET designed for switching and amplification applications. It is housed in a TO-92 package and has a drain-to-source breakdown voltage of 500 V, a gate-to-source voltage rating of ±20 V, and an on-state drain current of up to 150 mA. The device features a low threshold voltage range of 2.0 to 4.0 V, a typical on-state resistance of 40 to 60 Ω at 10 V gate drive, and an integral source-drain diode with a forward voltage drop of 0.8 V. Operating and storage temperatures range from -55°C to +150°C, and it is RoHS compliant in its -G packaged version.