The VN0550 is a 500V N-channel enhancement-mode vertical DMOS FET designed for switching and amplifying applications. It is packaged in a 3-lead TO-92 case with a maximum operating ambient temperature of +150°C and a thermal resistance of 132°C/W. The device has a drain-to-source breakdown voltage of 500V, a gate threshold voltage range of 2 to 4V, and a static drain-to-source on-state resistance of 40 to 60Ω at 10V gate voltage. It features an integral source-drain diode with a forward voltage drop of 0.8V at 500mA and reverse recovery time of 300ns. The transistor is RoHS-compliant, exhibits a positive temperature coefficient, and is free from thermal runaway and secondary breakdown.
This enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. Vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.
Additional Features
| Microchip Technology, Inc. | |
|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | VN0550 |
| Product Name | 500V N-Channel Enhancement-Mode MOSFET |
| Polarity | N-Channel |
