The VN0104 is an N-channel enhancement-mode vertical DMOS FET designed for switching and amplifying applications requiring low threshold voltage, high input impedance, and fast switching speeds. It is packaged in a TO-92 case, with dimensions of 5.00-6.10 mm in height and 1.70-2.10 mm in body diameter. The device has a drain-to-source breakdown voltage of 40V, a static drain-to-source on-state resistance of 3.0Ω maximum at 10V gate voltage, and a continuous drain current of 350mA at 25°C. It includes an integral source-drain diode with a forward voltage drop of 1.2V to 1.8V. The part is lead-free and RoHS compliant, with an operating temperature range of -55°C to +150°C and a thermal resistance of 132°C/W. It meets the requirements for thermal stability and is free from secondary breakdown.
This enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. Vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.
Additional Features
| Microchip Technology, Inc. | |
|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | VN0104 |
| Product Name | 40V N-Channel Enhancement-Mode MOSFET |
| Polarity | N-Channel |
