The TP5322 is a P-channel enhancement-mode vertical DMOS FET designed for switching and amplifying applications requiring low threshold voltage, high breakdown voltage, and fast switching. It is available in 3-lead SOT-23 and 3-lead SOT-89 packages. The device has a maximum drain-to-source breakdown voltage of -220 V, a maximum gate-source threshold voltage of -2.4 V, and a static drain-to-source on-state resistance of 12 Ω at -10 V gate-source voltage and -200 mA drain current. The input capacitance is 110 pF maximum. The operating ambient and storage temperature ranges are -55°C to +150°C. Thermal resistance is 203 °C/W for SOT-23 and 133 °C/W for SOT-89. The device is free from thermal runaway and secondary breakdown.
TP5322 is a low threshold enhancement-mode (normally-off) transistor utilizing an advanced vertical DMOS structure and well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. Vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.
Additional Features
| Microchip Technology, Inc. | |
|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | TP5322 |
| Product Name | -220V P-Channel Enhancement-Mode MOSFET |
| Polarity | P-Channel |
