The TP2640 is a P-channel enhancement-mode vertical DMOS FET designed for switching and amplifying applications requiring low threshold voltage, high breakdown voltage, and fast switching. It is available in a 3-lead TO-92 package and an 8-lead SOIC package. The device has a drain-to-source breakdown voltage of -400 V, a maximum gate-source voltage of ±20 V, and a gate threshold voltage ranging from -0.8 V to -2 V. It exhibits a static drain-to-source on-state resistance of 11 to 15 Ω at -10 V gate bias and -300 mA drain current. Operating ambient and storage temperatures range from -55°C to +150°C. Thermal resistance is 132 °C/W for the TO-92 package and 101 °C/W for the SOIC package. The device is Pb-free and RoHS-compliant.
This low threshold, enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. Vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.
Additional Features
| Microchip Technology, Inc. | |
|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | TP2640 |
| Product Name | -400V P-Channel Enhancement-Mode MOSFET |
| Polarity | P-Channel |
