Microchip Technology, Inc. MOSFET TP2635N3-G P003

The TP2635N3-G is a P-channel enhancement-mode vertical DMOS FET in a TO-92 package, designed for low-threshold switching applications such as TTL/CMOS interfaces and battery-operated systems. It has a drain-to-source breakdown voltage of -350 V, a gate threshold voltage range of -0.8 V to -2.0 V, and a maximum on-state drain current of -0.7 A at -10 V gate-source voltage. The device exhibits a static drain-to-source on-resistance of 11 to 15 Ω under specified conditions and features low input capacitance of up to 300 pF. It operates over a temperature range of -55°C to +150°C and is RoHS compliant. The TO-92 package has dimensions of up to 0.210 inches in height and 0.205 inches in body width.