The TP2635 is a P-channel enhancement-mode vertical DMOS FET designed for switching and amplifying applications requiring low threshold voltage, high input impedance, and fast switching speeds. It is packaged in a 3-lead TO-92 case and has a drain-to-source breakdown voltage of -350 V, a maximum gate-to-source voltage of ±20 V, and an on-state resistance of 11 to 15 Ω at V_GS = -10 V and I_D = -300 mA. The gate threshold voltage ranges from -0.8 V to -2 V, and the device operates over an ambient temperature range of -55°C to +150°C. It meets RoHS compliance and is free from thermal runaway and secondary breakdown. Thermal resistance is 132 °C/W in the TO-92 package.
This low threshold, enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. Vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.
Additional Features
| Microchip Technology, Inc. | |
|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | TP2635 |
| Product Name | -350V P-Channel Enhancement-Mode MOSFET |
| Polarity | P-Channel |
