The TP2540 is a P-channel enhancement-mode vertical DMOS FET designed for switching and amplifying applications requiring low threshold voltage, high breakdown voltage, and fast switching speeds. It is available in 3-lead SOT-89 and 3-lead TO-92 packages. The device has a drain-to-source breakdown voltage of -400 V, a maximum gate threshold voltage of -2.4 V, and a static drain-to-source on-state resistance of 19 to 30 Ω depending on gate voltage. It features an input capacitance of 60 pF typical, a maximum operating ambient temperature of +150 °C, and thermal resistance of 132 °C/W for the TO-92 package and 133 °C/W for the SOT-89 package.
This low threshold, enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. Vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.
Additional Features
| Microchip Technology, Inc. | |
|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | TP2540 |
| Product Name | -400V P-Channel Enhancement-Mode MOSFET |
| Polarity | P-Channel |
