Microchip Technology, Inc. MOSFET TP2535N3-G P014

The TP2535 is a P-channel enhancement mode vertical DMOS FET designed for low threshold voltage switching applications such as TTL and CMOS logic interfaces, solid state relays, and battery-operated systems. It is packaged in a TO-92 case, with a drain-to-source breakdown voltage of -350 V, a maximum gate-source threshold voltage of -2.4 V, and a static drain-to-source on-state resistance of 25 Ω at -10 V gate-source voltage and -100 mA drain current. The device supports continuous drain current of -86 mA and has a maximum operating temperature of +150°C. The part is RoHS compliant, indicated by the '-G' suffix.