Microchip Technology, Inc. MOSFET TP2535N3-G P002

The TP2535 is a P-channel enhancement mode vertical DMOS FET designed for switching and amplifying applications requiring low threshold voltage and high input impedance. It is packaged in a TO-92 case with a maximum drain-to-source voltage of -350 V, a gate threshold voltage range of -1.0 V to -2.4 V, and a static drain-to-source on-resistance of up to 30 Ω at -4.5 V gate voltage. The device supports continuous drain current of -86 mA and operates over a temperature range of -55°C to +150°C. It is RoHS compliant as indicated by the -G suffix.