The TP2535 is a P-channel enhancement-mode vertical DMOS FET designed for low-threshold switching applications such as logic-level interfaces and battery-operated systems. It is packaged in a 3-lead TO-92 case with a drain-to-source breakdown voltage of -350 V, a maximum gate-to-source voltage of ±20 V, and a gate threshold voltage ranging from -1 V to -2.4 V. The device has a typical input capacitance of 60 pF, a static drain-to-source on-state resistance of 19 to 30 Ω depending on gate voltage, and operates over an ambient temperature range of -55°C to +150°C. Thermal resistance is 132°C/W. It exhibits fast switching speeds, low leakage, and is free from thermal runaway and secondary breakdown.
This low threshold, enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. Vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.
Additional Features
| Microchip Technology, Inc. | |
|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | TP2535 |
| Product Name | -350V P-Channel Enhancement-Mode MOSFET |
| Polarity | P-Channel |
