Microchip Technology, Inc. TRANSISTORS - Transistors - FETs, MOSFETs - RF - TP2520N8 TP2520N8

Description
Manufacturer: Microchip Technology Win Source Part Number: 048084-TP2520N8 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 1.6W (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-243AA (SOT-89) Dimension: TO-243AA Drain-Source Breakdown Voltage: 200V Continuous Drain Current at 25°C: 260mA (Tj) Gate-Source Threshold Voltage: 2.4V @ 1mA Max Input Capacitance: 125pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 12 Ohm @ 200mA, 10V Popularity: Medium Fake Threat In the Open Market: 38 pct. Supply and Demand Status: Balance
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Description
Manufacturer: Microchip Technology Win Source Part Number: 048084-TP2520N8 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 1.6W (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-243AA (SOT-89) Dimension: TO-243AA Drain-Source Breakdown Voltage: 200V Continuous Drain Current at 25°C: 260mA (Tj) Gate-Source Threshold Voltage: 2.4V @ 1mA Max Input Capacitance: 125pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 12 Ohm @ 200mA, 10V Popularity: Medium Fake Threat In the Open Market: 38 pct. Supply and Demand Status: Balance
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TRANSISTORS - Transistors - FETs, MOSFETs - RF - TP2520N8 - 048084-TP2520N8 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - TP2520N8
048084-TP2520N8
TRANSISTORS - Transistors - FETs, MOSFETs - RF - TP2520N8 048084-TP2520N8
Manufacturer: Microchip Technology Win Source Part Number: 048084-TP2520N8 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 1.6W (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-243AA (SOT-89) Dimension: TO-243AA Drain-Source Breakdown Voltage: 200V Continuous Drain Current at 25°C: 260mA (Tj) Gate-Source Threshold Voltage: 2.4V @ 1mA Max Input Capacitance: 125pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 12 Ohm @ 200mA, 10V Popularity: Medium Fake Threat In the Open Market: 38 pct. Supply and Demand Status: Balance

Manufacturer: Microchip Technology
Win Source Part Number: 048084-TP2520N8
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 1.6W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-243AA (SOT-89)
Dimension: TO-243AA
Drain-Source Breakdown Voltage: 200V
Continuous Drain Current at 25°C: 260mA (Tj)
Gate-Source Threshold Voltage: 2.4V @ 1mA
Max Input Capacitance: 125pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 12 Ohm @ 200mA, 10V
Popularity: Medium
Fake Threat In the Open Market: 38 pct.
Supply and Demand Status: Balance

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Technical Specifications

  Win Source Electronics
Product Category Metal-Oxide Semiconductor FET (MOSFET)
Product Number 048084-TP2520N8
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - TP2520N8
Polarity P-Channel; P-Channel
V(BR)DSS 200 volts
PD 1600 milliwatts
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