The TP2520 is a P-channel enhancement-mode vertical DMOS FET designed for low-threshold switching applications such as logic-level interfaces, solid-state relays, and battery-operated systems. It is packaged in a 3-lead SOT-89, with a maximum drain-to-source breakdown voltage of -200 V, a maximum gate-to-source voltage of ±20 V, and a gate threshold voltage of -2.4 V maximum. The device exhibits an on-state drain current of up to -750 mA and a static drain-to-source on-state resistance of 12 Ω maximum at V_GS = -10 V and I_D = -200 mA. It operates across an ambient temperature range of -55°C to +150°C, with a thermal resistance of 133 °C/W. The component is suitable for applications requiring high input impedance, low input capacitance (125 pF maximum), and fast switching speeds. It is RoHS-compliant and free from thermal runaway and secondary breakdown.
This low threshold enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. Vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.
Additional Features
| Microchip Technology, Inc. | |
|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | TP2520 |
| Product Name | -200V P-Channel Enhancement-Mode MOSFET |
| Polarity | P-Channel |
