Microchip Technology, Inc. TRANSISTORS - Transistors - FETs, MOSFETs - RF - TP2510N8-G TP2510N8-G

Description
Manufacturer: Microchip Technology Win Source Part Number: 1110977-TP2510N8-G Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 1.6W (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-243AA (SOT-89) Dimension: TO-243AA Drain-Source Breakdown Voltage: 100V Continuous Drain Current at 25°C: 480mA (Tj) Gate-Source Threshold Voltage: 2.4V @ 1mA Max Input Capacitance: 125pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 3.5 Ohm @ 750mA, 10V Popularity: Medium Fake Threat In the Open Market: 66 pct. Supply and Demand Status: Limited
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - TP2510N8-G - 1110977-TP2510N8-G - Win Source Electronics
    Win Source Electronics
  • Single FETs, MOSFETs - TP2510N8-G - ODG (Origin Data Global)
    ODG (Origin Data Global)
  • Single FETs, MOSFETs - TP2510N8-GTR-ND - DigiKey
    DigiKey
  • Single FETs, MOSFETs - TP2510N8-GCT-ND - DigiKey
    DigiKey
  • Single FETs, MOSFETs - TP2510N8-GDKR-ND - DigiKey
    DigiKey
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - TP2510N8-G - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
  • Mosfet, P-Ch, -0.48A, 100V, Sot-89-3; Transistor Polarity Microchip - 44AC3372 - Newark, An Avnet Company
    Newark, An Avnet Company
Request a Quote Datasheet
Description
Manufacturer: Microchip Technology Win Source Part Number: 1110977-TP2510N8-G Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 1.6W (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-243AA (SOT-89) Dimension: TO-243AA Drain-Source Breakdown Voltage: 100V Continuous Drain Current at 25°C: 480mA (Tj) Gate-Source Threshold Voltage: 2.4V @ 1mA Max Input Capacitance: 125pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 3.5 Ohm @ 750mA, 10V Popularity: Medium Fake Threat In the Open Market: 66 pct. Supply and Demand Status: Limited
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - TP2510N8-G - 1110977-TP2510N8-G - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - TP2510N8-G
1110977-TP2510N8-G
TRANSISTORS - Transistors - FETs, MOSFETs - RF - TP2510N8-G 1110977-TP2510N8-G
Manufacturer: Microchip Technology Win Source Part Number: 1110977-TP2510N8-G Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 1.6W (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-243AA (SOT-89) Dimension: TO-243AA Drain-Source Breakdown Voltage: 100V Continuous Drain Current at 25°C: 480mA (Tj) Gate-Source Threshold Voltage: 2.4V @ 1mA Max Input Capacitance: 125pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 3.5 Ohm @ 750mA, 10V Popularity: Medium Fake Threat In the Open Market: 66 pct. Supply and Demand Status: Limited

Manufacturer: Microchip Technology
Win Source Part Number: 1110977-TP2510N8-G
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 1.6W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-243AA (SOT-89)
Dimension: TO-243AA
Drain-Source Breakdown Voltage: 100V
Continuous Drain Current at 25°C: 480mA (Tj)
Gate-Source Threshold Voltage: 2.4V @ 1mA
Max Input Capacitance: 125pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 3.5 Ohm @ 750mA, 10V
Popularity: Medium
Fake Threat In the Open Market: 66 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Single FETs, MOSFETs - TP2510N8-G - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
TP2510N8-G
Single FETs, MOSFETs TP2510N8-G
MOSFET P-CH 100V 480MA TO243AA

MOSFET P-CH 100V 480MA TO243AA

Supplier's Site Datasheet
Single FETs, MOSFETs - TP2510N8-GTR-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
TP2510N8-GTR-ND
Single FETs, MOSFETs TP2510N8-GTR-ND
P-Channel 100V 480mA (Tj) 1.6W (Ta) Surface Mount TO-243AA (SOT-89)

P-Channel 100V 480mA (Tj) 1.6W (Ta) Surface Mount TO-243AA (SOT-89)

Buy Now Datasheet
Single FETs, MOSFETs - TP2510N8-GCT-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
TP2510N8-GCT-ND
Single FETs, MOSFETs TP2510N8-GCT-ND
P-Channel 100V 480mA (Tj) 1.6W (Ta) Surface Mount TO-243AA (SOT-89)

P-Channel 100V 480mA (Tj) 1.6W (Ta) Surface Mount TO-243AA (SOT-89)

Buy Now Datasheet
Single FETs, MOSFETs - TP2510N8-GDKR-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
TP2510N8-GDKR-ND
Single FETs, MOSFETs TP2510N8-GDKR-ND
P-Channel 100V 480mA (Tj) 1.6W (Ta) Surface Mount TO-243AA (SOT-89)

P-Channel 100V 480mA (Tj) 1.6W (Ta) Surface Mount TO-243AA (SOT-89)

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - TP2510N8-G - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
TP2510N8-G
Discrete Semiconductor Products - Transistors - FETs, MOSFETs TP2510N8-G
MOSFET P-CH 100V 480MA TO243AA

MOSFET P-CH 100V 480MA TO243AA

Supplier's Site
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
MOSFET
TP2510N8-G
MOSFET TP2510N8-G
MOSFET 100V 3.5Ohm

MOSFET 100V 3.5Ohm

Buy Now Datasheet
Mosfet, P-Ch, -0.48A, 100V, Sot-89-3; Transistor Polarity Microchip - 44AC3372 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Mosfet, P-Ch, -0.48A, 100V, Sot-89-3; Transistor Polarity Microchip
44AC3372
Mosfet, P-Ch, -0.48A, 100V, Sot-89-3; Transistor Polarity Microchip 44AC3372
MOSFET, P-CH, -0.48A, 100V, SOT-89-3; Transistor Polarity:P Channel; Continuous Drain Current Id:-480mA; Drain Source Voltage Vds:-100V; On Resistance Rds(on):2ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-2.4V; Power RoHS Compliant: Yes

MOSFET, P-CH, -0.48A, 100V, SOT-89-3; Transistor Polarity:P Channel; Continuous Drain Current Id:-480mA; Drain Source Voltage Vds:-100V; On Resistance Rds(on):2ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-2.4V; Power RoHS Compliant: Yes

Supplier's Site Datasheet

Technical Specifications

  Win Source Electronics ODG (Origin Data Global) DigiKey Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED Newark, An Avnet Company
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number 1110977-TP2510N8-G TP2510N8-G TP2510N8-GTR-ND TP2510N8-G TP2510N8-G 44AC3372
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - TP2510N8-G Single FETs, MOSFETs Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET Mosfet, P-Ch, -0.48A, 100V, Sot-89-3; Transistor Polarity Microchip
Polarity P-Channel; P-Channel P-Channel; P-Channel P-Channel
V(BR)DSS 100 volts 100 volts
PD 1600 milliwatts 1600 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
Package Type SOT3; SOT89; TO-243AA (SOT-89) SOT89; TO-243AA TO-243AA TO-243AA TO-3; SOT89
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