Microchip Technology, Inc. Single FETs, MOSFETs TP2510N8-G

Description
P-Channel 100V 480mA (Tj) 1.6W (Ta) Surface Mount TO-243AA (SOT-89)
Request a Quote Datasheet
Description
P-Channel 100V 480mA (Tj) 1.6W (Ta) Surface Mount TO-243AA (SOT-89)
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - TP2510N8-GTR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
TP2510N8-GTR-ND
Single FETs, MOSFETs TP2510N8-GTR-ND
P-Channel 100V 480mA (Tj) 1.6W (Ta) Surface Mount TO-243AA (SOT-89)

P-Channel 100V 480mA (Tj) 1.6W (Ta) Surface Mount TO-243AA (SOT-89)

Buy Now Datasheet
Single FETs, MOSFETs - TP2510N8-GCT-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
TP2510N8-GCT-ND
Single FETs, MOSFETs TP2510N8-GCT-ND
P-Channel 100V 480mA (Tj) 1.6W (Ta) Surface Mount TO-243AA (SOT-89)

P-Channel 100V 480mA (Tj) 1.6W (Ta) Surface Mount TO-243AA (SOT-89)

Buy Now Datasheet
Single FETs, MOSFETs - TP2510N8-GDKR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
TP2510N8-GDKR-ND
Single FETs, MOSFETs TP2510N8-GDKR-ND
P-Channel 100V 480mA (Tj) 1.6W (Ta) Surface Mount TO-243AA (SOT-89)

P-Channel 100V 480mA (Tj) 1.6W (Ta) Surface Mount TO-243AA (SOT-89)

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - TP2510N8-G - 1110977-TP2510N8-G - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - TP2510N8-G
1110977-TP2510N8-G
TRANSISTORS - Transistors - FETs, MOSFETs - RF - TP2510N8-G 1110977-TP2510N8-G
Manufacturer: Microchip Technology Win Source Part Number: 1110977-TP2510N8-G Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 1.6W (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-243AA (SOT-89) Dimension: TO-243AA Drain-Source Breakdown Voltage: 100V Continuous Drain Current at 25°C: 480mA (Tj) Gate-Source Threshold Voltage: 2.4V @ 1mA Max Input Capacitance: 125pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 3.5 Ohm @ 750mA, 10V Popularity: Medium Fake Threat In the Open Market: 66 pct. Supply and Demand Status: Limited

Manufacturer: Microchip Technology
Win Source Part Number: 1110977-TP2510N8-G
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 1.6W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-243AA (SOT-89)
Dimension: TO-243AA
Drain-Source Breakdown Voltage: 100V
Continuous Drain Current at 25°C: 480mA (Tj)
Gate-Source Threshold Voltage: 2.4V @ 1mA
Max Input Capacitance: 125pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 3.5 Ohm @ 750mA, 10V
Popularity: Medium
Fake Threat In the Open Market: 66 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Single FETs, MOSFETs - TP2510N8-G - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
TP2510N8-G
Single FETs, MOSFETs TP2510N8-G
MOSFET P-CH 100V 480MA TO243AA

MOSFET P-CH 100V 480MA TO243AA

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - TP2510N8-G - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
TP2510N8-G
Discrete Semiconductor Products - Transistors - FETs, MOSFETs TP2510N8-G
MOSFET P-CH 100V 480MA TO243AA

MOSFET P-CH 100V 480MA TO243AA

Supplier's Site
Sheung Wan, Hong Kong
MOSFET 100V 3.5Ohm

MOSFET 100V 3.5Ohm

Buy Now Datasheet
Mosfet, P-Ch, -0.48A, 100V, Sot-89-3; Transistor Polarity Microchip - 44AC3372 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, P-Ch, -0.48A, 100V, Sot-89-3; Transistor Polarity Microchip
44AC3372
Mosfet, P-Ch, -0.48A, 100V, Sot-89-3; Transistor Polarity Microchip 44AC3372
MOSFET, P-CH, -0.48A, 100V, SOT-89-3; Transistor Polarity:P Channel; Continuous Drain Current Id:-480mA; Drain Source Voltage Vds:-100V; On Resistance Rds(on):2ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-2.4V; Power RoHS Compliant: Yes

MOSFET, P-CH, -0.48A, 100V, SOT-89-3; Transistor Polarity:P Channel; Continuous Drain Current Id:-480mA; Drain Source Voltage Vds:-100V; On Resistance Rds(on):2ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-2.4V; Power RoHS Compliant: Yes

Supplier's Site Datasheet

Technical Specifications

  DigiKey Win Source Electronics ODG (Origin Data Global) Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED Newark, An Avnet Company
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number TP2510N8-GTR-ND 1110977-TP2510N8-G TP2510N8-G TP2510N8-G TP2510N8-G 44AC3372
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - TP2510N8-G Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET Mosfet, P-Ch, -0.48A, 100V, Sot-89-3; Transistor Polarity Microchip
Polarity P-Channel P-Channel; P-Channel P-Channel; P-Channel
Package Type TO-243AA SOT3; SOT89; TO-243AA (SOT-89) SOT89; TO-243AA TO-243AA TO-3; SOT89
V(BR)DSS 100 volts 100 volts
PD 1600 milliwatts 1600 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
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