The TP2510 is a P-channel enhancement-mode vertical DMOS FET designed for switching and amplifying applications requiring low threshold voltage, high breakdown voltage, and fast switching speeds. It comes in a 3-lead SOT-89 package with dimensions up to 4.60 mm in length, 2.60 mm in width, and 1.60 mm in height. The device has a drain-to-source breakdown voltage of -100 V, a maximum gate-to-source voltage of ±20 V, and a gate threshold voltage ranging from -1 V to -2.4 V. Its static drain-to-source on-state resistance is 3.5 Ω maximum at -10 V gate drive and -750 mA drain current. Input capacitance is 125 pF maximum at 0 V gate-source voltage. It operates from -55°C to +150°C ambient temperature and has a thermal resistance of 133 °C/W. The device meets RoHS compliance and is free from thermal runaway and secondary breakdown.
This low threshold enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. Vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.
Additional Features
| Microchip Technology, Inc. | |
|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | TP2510 |
| Product Name | -100V P-Channel Enhancement-Mode MOSFET |
| Polarity | P-Channel |
